STB200NF04L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

3.5mOhm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 25V

Series :

STripFET™ II

Pin Count :

3

Pbfree Code :

yes

Power Dissipation-Max :

300W Tc

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Voltage - Rated DC :

40V

Dual Supply Voltage :

40V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Base Part Number :

STB200N

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

480A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 50A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

50A

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Vgs (Max) :

±16V

Termination :

SMD/SMT

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Turn-Off Delay Time :

90 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

270ns

JESD-609 Code :

e3

Power Dissipation :

300W

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Number of Pins :

3

Radiation Hardening :

No

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

37 ns

Current Rating :

120A

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

16V

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

80 ns