STB200NF04T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Width :

9.35mm

Number of Elements :

1

Fall Time (Typ) :

120 ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

310W Tc

Height :

4.6mm

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Continuous Drain Current (ID) :

120A

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Turn-Off Delay Time :

140 ns

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

FET Type :

N-Channel

JESD-609 Code :

e3

Current Rating :

120A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pulsed Drain Current-Max (IDM) :

480A

Series :

STripFET™ II

Lead Free :

Lead Free

Power Dissipation :

310W

Voltage - Rated DC :

40V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Turn On Delay Time :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

RoHS Status :

ROHS3 Compliant

Base Part Number :

STB200N

Resistance :

3.7mOhm

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Number of Pins :

3

Element Configuration :

Single

Number of Terminations :

2

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

Matte Tin (Sn) - annealed

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

320ns