STB200NF03T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Additional Feature :

AVALANCHE RATED

Width :

9.35mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

60 ns

Threshold Voltage :

4V

Pulsed Drain Current-Max (IDM) :

480A

Dual Supply Voltage :

30V

Base Part Number :

STB200N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

300W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

300W

JESD-609 Code :

e3

Lead Free :

Lead Free

FET Type :

N-Channel

Current Rating :

120A

Rise Time :

195ns

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

245

Turn-Off Delay Time :

75 ns

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Case Connection :

DRAIN

Turn On Delay Time :

30 ns

Series :

STripFET™ III

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

60A

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 60A, 10V

Transistor Application :

SWITCHING

Length :

10.4mm

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Nominal Vgs :

4 V

Voltage - Rated DC :

30V

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Height :

4.6mm

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4950pF @ 25V

Vgs (Max) :

±20V

Pin Count :

3

Number of Pins :

3

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)