STB200NF03T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Fall Time (Typ) :

60 ns

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

4950pF @ 25V

Pin Count :

3

Power Dissipation :

300W

Length :

10.4mm

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Series :

STripFET™ III

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 60A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

JESD-609 Code :

e3

Rise Time :

195ns

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Turn-Off Delay Time :

75 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

245

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Width :

9.35mm

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Element Material :

SILICON

Height :

4.6mm

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Radiation Hardening :

No

Termination :

SMD/SMT

Base Part Number :

STB200N

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

30 ns

Power Dissipation-Max :

300W Tc

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

480A

Mount :

Surface Mount

Current Rating :

120A