STB200NF03T4

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Mfr.Part #
STB200NF03T4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 120A D2PAK
Stock
4,381
In Stock :
4,381

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
245
Rise Time :
195ns
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JESD-609 Code :
e3
Dual Supply Voltage :
30V
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
12 Weeks
Termination :
SMD/SMT
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
75 ns
Threshold Voltage :
4V
ECCN Code :
EAR99
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~175°C TJ
Power Dissipation :
300W
Nominal Vgs :
4 V
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
3.6m Ω @ 60A, 10V
Case Connection :
DRAIN
Base Part Number :
STB200N
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Radiation Hardening :
No
Continuous Drain Current (ID) :
60A
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Turn On Delay Time :
30 ns
Time@Peak Reflow Temperature-Max (s) :
30
Width :
9.35mm
Vgs (Max) :
±20V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain to Source Breakdown Voltage :
30V
Mount :
Surface Mount
Transistor Element Material :
SILICON
Number of Pins :
3
Number of Terminations :
2
Height :
4.6mm
Number of Elements :
1
Pin Count :
3
Terminal Form :
Gull wing
Current Rating :
120A
Series :
STripFET™ III
Element Configuration :
Single
Length :
10.4mm
Fall Time (Typ) :
60 ns
Input Capacitance (Ciss) (Max) @ Vds :
4950pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Voltage - Rated DC :
30V
Pulsed Drain Current-Max (IDM) :
480A
Packaging :
Tape and Reel (TR)
Datasheets
STB200NF03T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB200NF03T4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Base Part Number:STB200N, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:2, STB200NF03T4 pinout, STB200NF03T4 datasheet PDF, STB200NF03T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB200NF03T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB200NF03T4


N-Channel Tape & Reel (TR) 3.6m Ω @ 60A, 10V ±20V 4950pF @ 25V 140nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB200NF03T4 Overview


The maximum input capacitance of this device is 4950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 480A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

STB200NF03T4 Features


a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 480A.
a threshold voltage of 4V


STB200NF03T4 Applications


There are a lot of STMicroelectronics
STB200NF03T4 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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