STB200N6F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

STripFET™

Fall Time (Typ) :

14 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

245

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

26 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 60A, 10V

Pin Count :

4

Number of Elements :

1

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

918 mJ

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

120A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Rise Time :

75ns

DS Breakdown Voltage-Min :

60V

Number of Pins :

3

Turn-Off Delay Time :

86 ns

Number of Terminations :

2

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Part Number :

STB200N

Terminal Position :

Single

Additional Feature :

ULTRA-LOW RESISTANCE

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation-Max :

330W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc