STB28N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

25V

Turn On Delay Time :

14.5 ns

Case Connection :

DRAIN

Fall Time (Typ) :

8 ns

Drain to Source Breakdown Voltage :

600V

Pulsed Drain Current-Max (IDM) :

88A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

FET Type :

N-Channel

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

170W Tc

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

100 ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

150m Ω @ 11A, 10V

Avalanche Energy Rating (Eas) :

350 mJ

Weight :

3.949996g

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 100V

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Contact Plating :

Tin

Base Part Number :

STB28N

Rise Time :

7.2ns

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

22A

Series :

MDmesh™ II Plus

Lead Free :

Lead Free

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mount :

Surface Mount