STB26NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

140W Tc

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Rise Time :

25ns

Threshold Voltage :

2V

Vgs (Max) :

±30V

Number of Terminations :

2

Manufacturer Package Identifier :

D2PAK-0079457

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

85 ns

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

13 ns

Fall Time (Typ) :

50 ns

Continuous Drain Current (ID) :

20A

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

Gull wing

Power Dissipation :

140W

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Junction Temperature (Tj) :

150°C

Pulsed Drain Current-Max (IDM) :

80A

Number of Pins :

3

Transistor Application :

SWITCHING

Series :

MDmesh™ II

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Pin Count :

4

REACH SVHC :

No SVHC

Base Part Number :

STB26N

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Rds On (Max) @ Id, Vgs :

165m Ω @ 10A, 10V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

245

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Number of Channels :

1

Height :

4.83mm

Width :

10.4mm

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Length :

10.75mm

FET Type :

N-Channel

Resistance :

165mOhm

Mounting Type :

Surface Mount