STB25NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 50V

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Rise Time :

18ns

Continuous Drain Current (ID) :

21A

Lead Free :

Lead Free

JESD-609 Code :

e3

Element Configuration :

Single

Number of Elements :

1

Power Dissipation-Max :

160W Tc

Pulsed Drain Current-Max (IDM) :

84A

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

245

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Voltage - Rated DC :

600V

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

850 mJ

Power Dissipation :

160W

Resistance :

160mOhm

Series :

MDmesh™ II

Operating Temperature :

150°C TJ

Dual Supply Voltage :

600V

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Turn-Off Delay Time :

94 ns

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

24 ns

Current Rating :

20A

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Rds On (Max) @ Id, Vgs :

160m Ω @ 10.5A, 10V

FET Type :

N-Channel

Base Part Number :

STB25N

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

3 V

Number of Terminations :

2