STB24NM65N
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- Mfr.Part #
- STB24NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 19A D2PAK
- Stock
- 18,429
- In Stock ：
- 18,429
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 10ns
- Base Part Number :
- STB24N
- Pin Count :
- 4
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9.5A, 10V
- Turn-Off Delay Time :
- 80 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Resistance :
- 190mOhm
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 3V
- Turn On Delay Time :
- 25 ns
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 245
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 650V
- Power Dissipation-Max :
- 160W Tc
- Power Dissipation :
- 160W
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Operating Temperature :
- 150°C TJ
- Series :
- MDmesh™ II
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 19A
- Nominal Vgs :
- 3 V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 50V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- REACH SVHC :
- No SVHC
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 20 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- Vgs (Max) :
- ±25V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 76A
- Datasheets
- STB24NM65N
N-Channel Tape & Reel (TR) 190m Ω @ 9.5A, 10V ±25V 2500pF @ 50V 70nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB24NM65N Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2500pF @ 50V.This device conducts a continuous drain current (ID) of 19A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 76A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB24NM65N Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 19A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 76A.
a threshold voltage of 3V
STB24NM65N Applications
There are a lot of STMicroelectronics
STB24NM65N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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