STB24N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Base Part Number :

STB24N

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

61 ns

Resistance :

190mOhm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Height :

4.6mm

Radiation Hardening :

No

Series :

MDmesh™ II Plus

Factory Lead Time :

26 Weeks

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 100V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Vgs (Max) :

±25V

Case Connection :

DRAIN

Power Dissipation-Max :

150W Tc

Number of Pins :

3

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

190m Ω @ 9A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

72A

Continuous Drain Current (ID) :

18A

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Power Dissipation :

150W

Length :

10.4mm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

15 ns

Turn On Delay Time :

14 ns

Width :

9.35mm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

180 mJ

Mounting Type :

Surface Mount

Rise Time :

9ns

Packaging :

Cut Tape (CT)