STB20NM60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

650 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

192W Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Turn On Delay Time :

25 ns

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Pins :

3

FET Type :

N-Channel

Fall Time (Typ) :

11 ns

Turn-Off Delay Time :

42 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

290m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STB20N

Pin Count :

3

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

600V

Resistance :

290mOhm

Terminal Finish :

Matte Tin (Sn) - annealed

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Voltage - Rated DC :

650V

Number of Elements :

1

Mount :

Surface Mount

JESD-609 Code :

e3

Vgs (Max) :

±30V

Rise Time :

20ns

Number of Terminations :

2

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

245

Power Dissipation :

192W

Series :

MDmesh™

ECCN Code :

EAR99

Lead Free :

Lead Free

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

20A

RoHS Status :

ROHS3 Compliant

Current Rating :

20A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

80A

Factory Lead Time :

26 Weeks