STB20NM50-1
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- Mfr.Part #
- STB20NM50-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 20A I2PAK
- Stock
- 1,562
- In Stock ：
- 1,562
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1480pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Avalanche Energy Rating (Eas) :
- 650 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Current Rating :
- 20A
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 8.5 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Operating Temperature :
- -65°C~150°C TJ
- Number of Pins :
- 3
- Resistance :
- 200mOhm
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 10A, 10V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Power Dissipation-Max :
- 192W Tc
- Voltage - Rated DC :
- 550V
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Rise Time :
- 16ns
- Power Dissipation :
- 192W
- Base Part Number :
- STB20N
- Turn-Off Delay Time :
- 9 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Continuous Drain Current (ID) :
- 20A
- Series :
- MDmesh™
- Datasheets
- STB20NM50-1
N-Channel Tube 250m Ω @ 10A, 10V ±30V 1480pF @ 25V 56nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STB20NM50-1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 650 mJ.A device's maximum input capacitance is 1480pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 20A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 9 ns.Its maximum pulsed drain current is 80A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB20NM50-1 Features
the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 9 ns
based on its rated peak drain current 80A.
STB20NM50-1 Applications
There are a lot of STMicroelectronics
STB20NM50-1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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