STB190NF04T4
- Mfr.Part #
- STB190NF04T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A D2PAK
- Stock
- 12,843
- In Stock :
- 12,843
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 4.3m Ω @ 95A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 5V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 120A
- Voltage - Rated DC :
- 40V
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 480A
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Base Part Number :
- STB190N
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max :
- 310W Tc
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 860 mJ
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Rise Time :
- 380ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 75 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Power Dissipation :
- 310W
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Drain to Source Breakdown Voltage :
- 40V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 245
- Series :
- STripFET™ III
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Current Rating :
- 120A
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 100 ns
- Datasheets
- STB190NF04T4

N-Channel Tape & Reel (TR) 4.3m Ω @ 95A, 10V ±20V 5800pF @ 25V 130nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB190NF04T4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 860 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 480A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB190NF04T4 Features
the avalanche energy rating (Eas) is 860 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 480A.
STB190NF04T4 Applications
There are a lot of STMicroelectronics
STB190NF04T4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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