STB100N10F7

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Mfr.Part #
STB100N10F7
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 80A D2PAK
Stock
2,290
In Stock :
2,290

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Base Part Number :
STB100N
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
46 ns
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Element Configuration :
Single
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Height :
4.6mm
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
JEDEC-95 Code :
TO-220AB
Drain-source On Resistance-Max :
0.008Ohm
Fall Time (Typ) :
15 ns
Rds On (Max) @ Id, Vgs :
8m Ω @ 40A, 10V
Avalanche Energy Rating (Eas) :
400 mJ
Terminal Form :
THROUGH-HOLE
Width :
9.35mm
Factory Lead Time :
38 Weeks
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case Connection :
DRAIN
Weight :
3.949996g
Turn On Delay Time :
27 ns
Rise Time :
40ns
Continuous Drain Current (ID) :
80A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 10V
Lead Free :
Lead Free
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
100V
Number of Terminations :
3
Operating Temperature :
-55°C~175°C TJ
Number of Channels :
1
FET Type :
N-Channel
Series :
DeepGATE™, STripFET™ VII
Transistor Element Material :
SILICON
Power Dissipation-Max :
150W Tc
Input Capacitance (Ciss) (Max) @ Vds :
4369pF @ 50V
Length :
10.4mm
Datasheets
STB100N10F7
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB100N10F7 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STB100N, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1, STB100N10F7 pinout, STB100N10F7 datasheet PDF, STB100N10F7 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB100N10F7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB100N10F7


N-Channel Tape & Reel (TR) 8m Ω @ 40A, 10V ±20V 4369pF @ 50V 61nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB100N10F7 Description


STB100N10F7 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 100V. These STripFETTM F7-enabled N-channel Power MOSFETs have an improved trench gate structure that results in very low on-state resistance while also lowering internal capacitance and gate charge for quicker and more effective switching.



STB100N10F7 Features


  • Among the lowest RDS(on) on the market

  • Excellent FoM (figure of merit)

  • Low Crss/Ciss ratio for EMI immunity

  • High avalanche ruggedness



STB100N10F7 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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