STB100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Element Configuration :

Single

Rise Time :

40ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.008Ohm

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

27 ns

Continuous Drain Current (ID) :

80A

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Elements :

1

Length :

10.4mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

150W Tc

Terminal Form :

THROUGH-HOLE

Turn-Off Delay Time :

46 ns

Base Part Number :

STB100N

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Number of Pins :

3

Avalanche Energy Rating (Eas) :

400 mJ

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Width :

9.35mm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Height :

4.6mm

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

3.949996g

Factory Lead Time :

38 Weeks

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

DeepGATE™, STripFET™ VII

Fall Time (Typ) :

15 ns

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel