STB100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.4mm

Power Dissipation-Max :

150W Tc

FET Type :

N-Channel

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Series :

DeepGATE™, STripFET™ VII

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn On Delay Time :

27 ns

Transistor Application :

SWITCHING

Number of Channels :

1

Vgs (Max) :

±20V

Terminal Form :

THROUGH-HOLE

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Height :

4.6mm

Turn-Off Delay Time :

46 ns

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Width :

9.35mm

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

38 Weeks

ECCN Code :

EAR99

Rise Time :

40ns

Continuous Drain Current (ID) :

80A

Avalanche Energy Rating (Eas) :

400 mJ

Number of Elements :

1

Weight :

3.949996g

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Fall Time (Typ) :

15 ns

Element Configuration :

Single

Mount :

Surface Mount

JEDEC-95 Code :

TO-220AB

Base Part Number :

STB100N

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.008Ohm

Transistor Element Material :

SILICON