STB100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STB100N

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

46 ns

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Element Configuration :

Single

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Height :

4.6mm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.008Ohm

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Form :

THROUGH-HOLE

Width :

9.35mm

Factory Lead Time :

38 Weeks

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Weight :

3.949996g

Turn On Delay Time :

27 ns

Rise Time :

40ns

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

FET Type :

N-Channel

Series :

DeepGATE™, STripFET™ VII

Transistor Element Material :

SILICON

Power Dissipation-Max :

150W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Length :

10.4mm