STB100NF04T4
- Mfr.Part #
- STB100NF04T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A D2PAK
- Stock
- 1,031
- In Stock :
- 1,031
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 480A
- Turn On Delay Time :
- 35 ns
- Base Part Number :
- STB100N
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5100pF @ 25V
- Fall Time (Typ) :
- 50 ns
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Width :
- 9.35mm
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 245
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Nominal Vgs :
- 4 V
- Dual Supply Voltage :
- 40V
- Height :
- 4.6mm
- JESD-609 Code :
- e3
- Resistance :
- 4.6mOhm
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Threshold Voltage :
- 2V
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Factory Lead Time :
- 12 Weeks
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.4mm
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Turn-Off Delay Time :
- 80 ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Continuous Drain Current (ID) :
- 120A
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 300W
- Drain to Source Breakdown Voltage :
- 40V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- Automotive, AEC-Q101, STripFET™ II
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 50A, 10V
- ECCN Code :
- EAR99
- Rise Time :
- 220ns
- Power Dissipation-Max :
- 300W Tc
- Datasheets
- STB100NF04T4

N-Channel Tape & Reel (TR) 4.6m Ω @ 50A, 10V ±20V 5100pF @ 25V 150nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB100NF04T4 Description
STB100NF04T4 is an Automotive-grade N-channel STripFET? II Power MOSFET. The Power MOSFET STB100NF04T4 has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the STB100NF04T4 suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
STB100NF04T4 Features
-
AEC-Q101 qualified
-
Exceptional dv/dt capability?
-
100% avalanche tested?
-
Low gate charge
-
In the TO-263-3 package
STB100NF04T4 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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