STB100NF04T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

120A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

2V

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

80 ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

480A

Number of Terminations :

2

Length :

10.4mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

40V

Series :

Automotive, AEC-Q101, STripFET™ II

Base Part Number :

STB100N

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Mounting Type :

Surface Mount

Dual Supply Voltage :

40V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 50A, 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Height :

4.6mm

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

FET Type :

N-Channel

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Matte Tin (Sn) - annealed

Fall Time (Typ) :

50 ns

Turn On Delay Time :

35 ns

JESD-609 Code :

e3

Number of Pins :

3

Resistance :

4.6mOhm

Terminal Form :

Gull wing

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Nominal Vgs :

4 V

Mount :

Surface Mount

Number of Elements :

1

Power Dissipation-Max :

300W Tc

Power Dissipation :

300W

REACH SVHC :

No SVHC

Rise Time :

220ns

Width :

9.35mm

Peak Reflow Temperature (Cel) :

245

Gate to Source Voltage (Vgs) :

20V