STB10N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Weight :

3.949996g

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Drain to Source Breakdown Voltage :

650V

Drain-source On Resistance-Max :

0.6Ohm

Mounting Type :

Surface Mount

Height :

4.6mm

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Series :

MDmesh™ II Plus

Base Part Number :

STB10N6

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

85W Tc

Width :

9.35mm

Lead Free :

Lead Free

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Turn On Delay Time :

8.8 ns

Factory Lead Time :

26 Weeks

Power Dissipation :

85W

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 100V

Rise Time :

8ns

Number of Elements :

1

Continuous Drain Current (ID) :

7.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs (Max) :

±25V

Number of Channels :

1

Fall Time (Typ) :

13.2 ns

Length :

10.4mm

Mount :

Surface Mount

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Turn-Off Delay Time :

32.5 ns