STB10N60M2
- Mfr.Part #
- STB10N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7.5A D2PAK
- Stock
- 4,945
- In Stock :
- 4,945
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 7.5A
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 8.8 ns
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Base Part Number :
- STB10N6
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 8ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Weight :
- 3.949996g
- Height :
- 4.6mm
- Width :
- 9.35mm
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Tc
- Gate to Source Voltage (Vgs) :
- 25V
- Series :
- MDmesh™ II Plus
- Vgs (Max) :
- ±25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 32.5 ns
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.6Ohm
- Fall Time (Typ) :
- 13.2 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 13.5nC @ 10V
- Power Dissipation-Max :
- 85W Tc
- Factory Lead Time :
- 26 Weeks
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Power Dissipation :
- 85W
- Length :
- 10.4mm
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 100V
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Datasheets
- STB10N60M2

N-Channel Tape & Reel (TR) 600m Ω @ 3A, 10V ±25V 400pF @ 100V 13.5nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB10N60M2 Description
These devices are N-channel power MOSFET developed using MDesh M2 technology. Because of their ribbon layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, making them suitable for the most demanding high-efficiency converters.
STB10N60M2 Features
? Extremely low gate charge
? Excellent output capacitance (Coss) profile
? 100% avalanche tested
? Zener-protected
STB10N60M2 Applications
? Switching applications
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