STB10N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

650V

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Element Configuration :

Single

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

26 Weeks

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Series :

MDmesh™ II Plus

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Power Dissipation :

85W

Power Dissipation-Max :

85W Tc

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Width :

9.35mm

Drain-source On Resistance-Max :

0.6Ohm

Number of Elements :

1

Weight :

3.949996g

Drain to Source Voltage (Vdss) :

600V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Turn-Off Delay Time :

32.5 ns

Fall Time (Typ) :

13.2 ns

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

FET Type :

N-Channel

Base Part Number :

STB10N6

Rise Time :

8ns

Mount :

Surface Mount

Length :

10.4mm

Gate to Source Voltage (Vgs) :

25V

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Height :

4.6mm

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Turn On Delay Time :

8.8 ns

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Continuous Drain Current (ID) :

7.5A

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V