STB10N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation-Max :

85W Tc

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Power Dissipation :

85W

Weight :

3.949996g

Turn-Off Delay Time :

32.5 ns

Mounting Type :

Surface Mount

Rise Time :

8ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Drain-source On Resistance-Max :

0.6Ohm

Width :

9.35mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 100V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

2

Number of Pins :

3

Base Part Number :

STB10N6

Series :

MDmesh™ II Plus

Length :

10.4mm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs (Max) :

±25V

Height :

4.6mm

Drain to Source Breakdown Voltage :

650V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Terminal Form :

Gull wing

FET Type :

N-Channel

Continuous Drain Current (ID) :

7.5A

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Number of Channels :

1

Turn On Delay Time :

8.8 ns

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Fall Time (Typ) :

13.2 ns

RoHS Status :

ROHS3 Compliant