STB10N60M2

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Mfr.Part #
STB10N60M2
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 7.5A D2PAK
Stock
4,945
In Stock :
4,945

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
4.6mm
Number of Pins :
3
FET Type :
N-Channel
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
25V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
7.5A Tc
Gate Charge (Qg) (Max) @ Vgs :
13.5nC @ 10V
Base Part Number :
STB10N6
Rds On (Max) @ Id, Vgs :
600m Ω @ 3A, 10V
Rise Time :
8ns
Width :
9.35mm
Number of Terminations :
2
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
32.5 ns
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Transistor Application :
SWITCHING
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Series :
MDmesh™ II Plus
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 100V
Drain to Source Breakdown Voltage :
650V
Length :
10.4mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Continuous Drain Current (ID) :
7.5A
Drain to Source Voltage (Vdss) :
600V
Number of Channels :
1
Mount :
Surface Mount
Power Dissipation :
85W
Mounting Type :
Surface Mount
Weight :
3.949996g
Turn On Delay Time :
8.8 ns
Power Dissipation-Max :
85W Tc
Vgs (Max) :
±25V
Drain-source On Resistance-Max :
0.6Ohm
Fall Time (Typ) :
13.2 ns
Element Configuration :
Single
Number of Elements :
1
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
26 Weeks
Datasheets
STB10N60M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB10N60M2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:STB10N6, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Surface Mount, STB10N60M2 pinout, STB10N60M2 datasheet PDF, STB10N60M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB10N60M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB10N60M2


N-Channel Tape & Reel (TR) 600m Ω @ 3A, 10V ±25V 400pF @ 100V 13.5nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB10N60M2     Description


 These devices are N-channel power MOSFET developed using MDesh M2 technology. Because of their ribbon layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, making them suitable for the most demanding high-efficiency converters.


STB10N60M2     Features


? Extremely low gate charge

? Excellent output capacitance (Coss) profile

? 100% avalanche tested

? Zener-protected


STB10N60M2     Applications


? Switching applications

 


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