STB18NM60ND
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- Mfr.Part #
- STB18NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13A D2PAK
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 110W Tc
- Length :
- 10mm
- Vgs (Max) :
- ±25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 52A
- Drain to Source Voltage (Vdss) :
- 600V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Height :
- 4.4mm
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Operating Temperature :
- 150°C TJ
- Width :
- 8.95mm
- Case Connection :
- DRAIN
- Base Part Number :
- STB18N
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 187 mJ
- Resistance :
- 290mOhm
- Fall Time (Typ) :
- 18 ns
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 600V
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 6.5A, 10V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 13A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn On Delay Time :
- 55 ns
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 25V
- Turn-Off Delay Time :
- 13 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 50V
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Series :
- FDmesh™ II
- Packaging :
- Cut Tape (CT)
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Rise Time :
- 15.5ns
- Datasheets
- STB18NM60ND
N-Channel Cut Tape (CT) 290m Ω @ 6.5A, 10V ±25V 1030pF @ 50V 34nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB18NM60ND Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 187 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1030pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 52A.A turn-on delay time of 55 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STB18NM60ND Features
the avalanche energy rating (Eas) is 187 mJ
a continuous drain current (ID) of 13A
the turn-off delay time is 13 ns
based on its rated peak drain current 52A.
a 600V drain to source voltage (Vdss)
STB18NM60ND Applications
There are a lot of STMicroelectronics
STB18NM60ND applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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