STB18NF30
- Mfr.Part #
- STB18NF30
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 330V 18A D2PAK
- Stock
- 3,704
- In Stock :
- 3,704
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation :
- 150W
- Number of Pins :
- 3
- Power Dissipation-Max :
- 150W Tc
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101, STripFET™ II
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Resistance :
- 180mOhm
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 9A, 10V
- Peak Reflow Temperature (Cel) :
- 245
- Base Part Number :
- STB18N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 18A
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 12 Weeks
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 330V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1650pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- STB18NF30

N-Channel Tape & Reel (TR) 180m Ω @ 9A, 10V ±20V 1650pF @ 25V 44nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB18NF30 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1650pF @ 25V.This device has a continuous drain current (ID) of [18A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=330V, the drain-source breakdown voltage is 330V.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STB18NF30 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 330V voltage
STB18NF30 Applications
There are a lot of STMicroelectronics
STB18NF30 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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