STB18NF25
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- Mfr.Part #
- STB18NF25
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 17A D2PAK
- Stock
- 47,712
- In Stock ：
- 47,712
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Rise Time :
- 17.2ns
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 25V
- Continuous Drain Current (ID) :
- 17A
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 110W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 29.5nC @ 10V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 245
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101, STripFET™ II
- Turn-Off Delay Time :
- 21 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 110W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Turn On Delay Time :
- 8.8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- STB18N
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pulsed Drain Current-Max (IDM) :
- 68A
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 250V
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Pin Count :
- 4
- Resistance :
- 165mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 8.5A, 10V
- Fall Time (Typ) :
- 8.8 ns
- Datasheets
- STB18NF25
N-Channel Tape & Reel (TR) 165m Ω @ 8.5A, 10V ±20V 1000pF @ 25V 29.5nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB18NF25 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 54 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1000pF @ 25V.This device has a continuous drain current (ID) of [17A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 21 ns.A maximum pulsed drain current of 68A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STB18NF25 Features
the avalanche energy rating (Eas) is 54 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 68A.
STB18NF25 Applications
There are a lot of STMicroelectronics
STB18NF25 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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