STB18N55M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.24Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 100V

Width :

10.4mm

Radiation Hardening :

No

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

2

ECCN Code :

EAR99

Additional Feature :

ULTRA-LOW RESISTANCE

Operating Temperature :

150°C TJ

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

MDmesh™ V

Continuous Drain Current (ID) :

13A

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Elements :

1

Vgs (Max) :

±25V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

245

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

192m Ω @ 8A, 10V

Avalanche Energy Rating (Eas) :

200 mJ

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Base Part Number :

STB18N

Power Dissipation-Max :

110W Tc

Lead Free :

Lead Free

Length :

10.75mm

JESD-609 Code :

e3

Fall Time (Typ) :

13 ns

Height :

4.6mm

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

90W

Turn-Off Delay Time :

29 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

550V

Pulsed Drain Current-Max (IDM) :

52A

Threshold Voltage :

4V

Rise Time :

9.5ns

Element Configuration :

Single