STB185N55F3
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- Mfr.Part #
- STB185N55F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 120A D2PAK
- Stock
- 7,078
- In Stock ：
- 7,078
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- ULTRA-LOW RESISTANCE
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 110 ns
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 330W Tc
- Fall Time (Typ) :
- 50 ns
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 120A
- Turn On Delay Time :
- 25 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- 55V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Threshold Voltage :
- 2V
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 60A, 10V
- Power Dissipation :
- 330W
- Mount :
- Surface Mount
- Resistance :
- 3.5mOhm
- Pin Count :
- 3
- Base Part Number :
- STB185N
- Width :
- 10.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Vgs (Max) :
- ±20V
- Series :
- STripFET™
- Length :
- 10.75mm
- Pulsed Drain Current-Max (IDM) :
- 480A
- Rise Time :
- 150ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Height :
- 4.6mm
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 245
- Number of Elements :
- 1
- Datasheets
- STB185N55F3
N-Channel Tape & Reel (TR) 3.5m Ω @ 60A, 10V ±20V 6800pF @ 25V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB185N55F3 Overview
The maximum input capacitance of this device is 6800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 480A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STB185N55F3 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a threshold voltage of 2V
STB185N55F3 Applications
There are a lot of STMicroelectronics
STB185N55F3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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