STB16NS25T4
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- Mfr.Part #
- STB16NS25T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 16A D2PAK
- Stock
- 47,800
- In Stock ：
- 47,800
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 75 ns
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 175°C TJ
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Terminal Form :
- Gull wing
- Base Part Number :
- STB16N
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rise Time :
- 25ns
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- 245
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.28Ohm
- Pulsed Drain Current-Max (IDM) :
- 64A
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 16A
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 140W
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 30 ns
- Series :
- MESH OVERLAY™
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 25V
- Power Dissipation-Max :
- 140W Tc
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 8A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Mount :
- Surface Mount
- Pin Count :
- 3
- Voltage - Rated DC :
- 250V
- Drain to Source Breakdown Voltage :
- 250V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±20V
- Current Rating :
- 16A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STB16NS25T4
N-Channel Tape & Reel (TR) 280m Ω @ 8A, 10V ±20V 1270pF @ 25V 80nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB16NS25T4 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1270pF @ 25V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 64A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB16NS25T4 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 64A.
STB16NS25T4 Applications
There are a lot of STMicroelectronics
STB16NS25T4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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