STB16NF06LT4
- Mfr.Part #
- STB16NF06LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 16A D2PAK
- Stock
- 2,229
- In Stock :
- 2,229
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 20 ns
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 1V
- Height :
- 4.6mm
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Length :
- 10.75mm
- Mount :
- Surface Mount
- Resistance :
- 90mOhm
- Power Dissipation :
- 45W
- Radiation Hardening :
- No
- Base Part Number :
- STB16N
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 64A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Fall Time (Typ) :
- 12.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Pin Count :
- 4
- Width :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 8A, 10V
- Termination :
- SMD/SMT
- Power Dissipation-Max :
- 45W Tc
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 10 ns
- Peak Reflow Temperature (Cel) :
- 245
- Factory Lead Time :
- 12 Weeks
- Dual Supply Voltage :
- 60V
- Vgs (Max) :
- ±16V
- Nominal Vgs :
- 4 V
- Drain to Source Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 16V
- Series :
- STripFET™
- Continuous Drain Current (ID) :
- 16A
- Input Capacitance (Ciss) (Max) @ Vds :
- 345pF @ 25V
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Rise Time :
- 37ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Mounting Type :
- Surface Mount
- Current Rating :
- 16A
- Datasheets
- STB16NF06LT4

N-Channel Tape & Reel (TR) 90m Ω @ 8A, 10V ±16V 345pF @ 25V 10nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB16NF06LT4 Description
STB16NF06LT4 belongs to the family of automotive-grade N-channel STripFET? power MOSFETs that are designed based on the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process. This process makes it able to provide excellent manufacturing reproducibility based on extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps.
STB16NF06LT4 Features
-
Extremely high packing density
-
Low on-resistance
-
Rugged avalanche characteristics
-
Low gate charge
-
Available in the D2PAK package
STB16NF06LT4 Applications
-
Switching applications
-
Low-power electronics
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