STB16N65M5

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Mfr.Part #
STB16N65M5
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 12A D2PAK
Stock
1
In Stock :
1

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
ULTRA-LOW RESISTANCE
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
1250pF @ 100V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Type :
N-Channel
Mounting Type :
Surface Mount
Vgs (Max) :
±25V
Fall Time (Typ) :
8 ns
JESD-30 Code :
R-PSSO-G2
Operating Temperature :
150°C TJ
Width :
10.4mm
Turn-Off Delay Time :
6 ns
Transistor Application :
SWITCHING
Element Configuration :
Single
Transistor Element Material :
SILICON
Resistance :
279mOhm
Peak Reflow Temperature (Cel) :
245
ECCN Code :
EAR99
Number of Pins :
3
Continuous Drain Current (ID) :
12A
Rds On (Max) @ Id, Vgs :
299m Ω @ 6A, 10V
Height :
4.6mm
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
2
Packaging :
Digi-Reel®
Pin Count :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
MDmesh™ V
Pbfree Code :
yes
Turn On Delay Time :
25 ns
Power Dissipation :
90W
Terminal Finish :
Matte Tin (Sn) - annealed
Radiation Hardening :
No
Case Connection :
DRAIN
Base Part Number :
STB16N
Gate to Source Voltage (Vgs) :
25V
Drain to Source Breakdown Voltage :
650V
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Vgs(th) (Max) @ Id :
5V @ 250μA
Lead Free :
Lead Free
Avalanche Energy Rating (Eas) :
200 mJ
Length :
10.75mm
Rise Time :
7ns
Threshold Voltage :
4V
Power Dissipation-Max :
90W Tc
Terminal Form :
Gull wing
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Pulsed Drain Current-Max (IDM) :
48A
JESD-609 Code :
e3
Datasheets
STB16N65M5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB16N65M5 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:2, Base Part Number:STB16N, STB16N65M5 pinout, STB16N65M5 datasheet PDF, STB16N65M5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB16N65M5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB16N65M5


N-Channel Digi-Reel® 299m Ω @ 6A, 10V ±25V 1250pF @ 100V 31nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB16N65M5 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1250pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STB16N65M5 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 48A.
a threshold voltage of 4V


STB16N65M5 Applications


There are a lot of STMicroelectronics
STB16N65M5 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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