STB160NF3LLT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Peak Reflow Temperature (Cel) :

245

Continuous Drain Current (ID) :

160A

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Current Rating :

160A

Power Dissipation :

300W

Fall Time (Typ) :

120 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Pin Count :

4

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

16V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Rise Time :

350ns

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±16V

Mounting Type :

Surface Mount

Turn On Delay Time :

50 ns

Number of Pins :

3

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Base Part Number :

STB160N

Series :

STripFET™ III

Avalanche Energy Rating (Eas) :

1200 mJ

Element Configuration :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 80A, 10V

Lead Free :

Lead Free

Turn-Off Delay Time :

150 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Power Dissipation-Max :

300W Tc

Max Operating Temperature :

175°C

Vgs(th) (Max) @ Id :

1V @ 250μA

Min Operating Temperature :

-55°C

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Voltage - Rated DC :

30V

Pulsed Drain Current-Max (IDM) :

640A

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.004ohm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)