STB15NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

245

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Number of Terminations :

2

Continuous Drain Current (ID) :

14A

Gate to Source Voltage (Vgs) :

25V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Series :

MDmesh™ II

Rds On (Max) @ Id, Vgs :

299m Ω @ 7A, 10V

Fall Time (Typ) :

30 ns

Pulsed Drain Current-Max (IDM) :

56A

Power Dissipation :

125W

Base Part Number :

STB15N

Terminal Form :

Gull wing

Turn On Delay Time :

12 ns

Mount :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Rise Time :

14ns

Drain-source On Resistance-Max :

0.299Ohm

Turn-Off Delay Time :

80 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Power Dissipation-Max :

125W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Pin Count :

3