STB150NF04
- Mfr.Part #
- STB150NF04
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A D2PAK
- Stock
- 1,005
- In Stock :
- 1,005
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 45 ns
- Turn-Off Delay Time :
- 70 ns
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 40A, 10V
- Continuous Drain Current (ID) :
- 80A
- Series :
- STripFET™ II
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3650pF @ 25V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Resistance :
- 7mOhm
- Rise Time :
- 150ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300W
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- STB150N
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 40V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Pin Count :
- 4
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 245
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Datasheets
- STB150NF04

N-Channel Tape & Reel (TR) 7m Ω @ 40A, 10V ±20V 3650pF @ 25V 150nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB150NF04 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3650pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STB150NF04 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 70 ns
STB150NF04 Applications
There are a lot of STMicroelectronics
STB150NF04 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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