STB14NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rise Time :

13ns

Turn-Off Delay Time :

55 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

125W

Series :

MDmesh™ II

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

12A

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

245

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 50V

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - annealed

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

125W Tc

JESD-609 Code :

e3

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

650V

Terminal Form :

Gull wing

Vgs (Max) :

±25V

Base Part Number :

STB14N

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

48A

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Fall Time (Typ) :

20 ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

4

Mounting Type :

Surface Mount