STB13N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

Terminal Form :

Gull wing

Series :

SuperMESH5™

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.6mm

Number of Pins :

3

Power Dissipation :

190W

Drain to Source Breakdown Voltage :

800V

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Width :

9.35mm

Power Dissipation-Max :

190W Tc

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

42 ns

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Element Configuration :

Single

Resistance :

450mOhm

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

48A

Continuous Drain Current (ID) :

12A

Lead Free :

Lead Free

Radiation Hardening :

No

Fall Time (Typ) :

16 ns

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

450m Ω @ 6A, 10V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Base Part Number :

STB13N

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

16 ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 100µA

Rise Time :

16ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)