STB120NF10T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.35mm

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Packaging :

Tape and Reel (TR)

Base Part Number :

STB120N

Weight :

13.607771g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

312W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

68 ns

Voltage - Rated DC :

100V

Avalanche Energy Rating (Eas) :

550 mJ

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

312W Tc

Element Configuration :

Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

233nC @ 10V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 60A, 10V

Factory Lead Time :

12 Weeks

Threshold Voltage :

4V

Series :

STripFET™ II

Termination :

SMD/SMT

Pulsed Drain Current-Max (IDM) :

480A

Peak Reflow Temperature (Cel) :

245

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Mount :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Height :

4.6mm

Turn On Delay Time :

25 ns

Number of Pins :

3

Resistance :

10.5mOhm

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

ECCN Code :

EAR99

Current Rating :

120A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Terminal Form :

Gull wing

Length :

10.4mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Continuous Drain Current (ID) :

110A

Nominal Vgs :

4 V

Dual Supply Voltage :

100V

Turn-Off Delay Time :

132 ns

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rise Time :

90ns

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2