STB120N4LF6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Rise Time :

95ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Power Dissipation :

110W

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Turn-Off Delay Time :

125 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4m Ω @ 40A, 10V

Number of Terminations :

2

Case Connection :

DRAIN

Fall Time (Typ) :

45 ns

Packaging :

Tape and Reel (TR)

Base Part Number :

STB120N

Peak Reflow Temperature (Cel) :

245

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Threshold Voltage :

1V

Height :

4.6mm

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Factory Lead Time :

20 Weeks

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Power Dissipation-Max :

110W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Radiation Hardening :

No

Length :

10.75mm

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Lead Free :

Lead Free

Width :

10.4mm

Resistance :

4mOhm

Turn On Delay Time :

15 ns

Drain to Source Breakdown Voltage :

40V