SSM6N58NU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

26 ns

Number of Pins :

6

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

9 ns

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

129pF @ 15V

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

84m Ω @ 2A, 4.5V

RoHS Status :

RoHS Compliant

Max Power Dissipation :

1W

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-WDFN Exposed Pad

Continuous Drain Current (ID) :

4A

FET Feature :

Logic Level Gate, 1.8V Drive

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

1.8nC @ 4.5V

Published :

2014

Number of Channels :

2

Vgs(th) (Max) @ Id :

1V @ 1mA

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

1V

Operating Temperature :

150°C TJ