SQ4949EY-T1_GE3
- Mfr.Part #
- SQ4949EY-T1_GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2 P-CH 30V 7.5A 8SOIC
- Stock
- 24,872
- In Stock :
- 24,872
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Factory Lead Time :
- 12 Weeks
- FET Feature :
- Standard
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Published :
- 2017
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 28 ns
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 5.9A, 10V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 8
- Fall Time (Typ) :
- 8 ns
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 175°C
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 3.3W
- FET Type :
- 2 P-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1020pF @ 25V
- Rise Time :
- 9ns
- Power Dissipation :
- 3.3W
- Turn On Delay Time :
- 7 ns
- Continuous Drain Current (ID) :
- 7.5A
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- 8-SOIC
- Datasheets
- SQ4949EY-T1_GE3

SQ4949EY-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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