SQ4920EY-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

8A

Continuous Drain Current (ID) :

8A

Turn On Delay Time :

7 ns

Weight :

506.605978mg

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1465pF @ 15V

Number of Pins :

8

Operating Temperature :

-55°C~175°C TJ

Input Capacitance :

1.465nF

Power - Max :

4.4W

Resistance :

17.5mOhm

Radiation Hardening :

No

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rds On (Max) @ Id, Vgs :

14.5mOhm @ 6A, 10V

Min Operating Temperature :

-55°C

Element Configuration :

Dual

Series :

TrenchFET®

Max Power Dissipation :

4.4W

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Number of Elements :

2

Fall Time (Typ) :

8 ns

Rise Time :

10ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Max Operating Temperature :

175°C

Threshold Voltage :

2V

Factory Lead Time :

12 Weeks

Number of Channels :

2

FET Type :

2 N-Channel (Dual)

Rds On Max :

14.5 mΩ

Mounting Type :

Surface Mount

Drain to Source Resistance :

14.5mOhm

Supplier Device Package :

8-SO

Power Dissipation :

4.4W

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

25 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2014