SPD09P06PL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

38.8A

Rds On (Max) @ Id, Vgs :

250m Ω @ 6.8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

89 ns

Avalanche Energy Rating (Eas) :

70 mJ

Power Dissipation :

42W

Rise Time :

168ns

Series :

SIPMOS®

Drain to Source Breakdown Voltage :

-60V

ECCN Code :

EAR99

Published :

2001

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Turn-Off Delay Time :

49 ns

Element Configuration :

Single

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

9.7A

Power Dissipation-Max :

42W Tc

Mount :

Surface Mount

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

Current Rating :

-9.7A

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs (Max) :

±20V

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.25Ohm

Voltage - Rated DC :

-60V

Gate to Source Voltage (Vgs) :

20V