SPD02N60S5BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Series :

CoolMOS™

Drain Current-Max (Abs) (ID) :

1.8A

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 10V

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

3Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

not_compliant

Published :

2005

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

5.5V @ 80μA

JESD-609 Code :

e3

Terminal Position :

Single

Number of Terminations :

2

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

3.2A

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

25W Tc

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

50 mJ