SPD02N50C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Published :

2005

Case Connection :

DRAIN

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

50 mJ

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Number of Elements :

1

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pin Count :

3

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

1.8A

DS Breakdown Voltage-Min :

500V

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

5.4A

Drain-source On Resistance-Max :

3Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Factory Lead Time :

52 Weeks

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Operating Temperature (Max) :

150°C