SPD02N80C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Vgs (Max) :

±20V

Input Capacitance :

290pF

Min Operating Temperature :

-55°C

Fall Time (Typ) :

18 ns

Power Dissipation-Max :

42W Tc

Drain to Source Voltage (Vdss) :

800V

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Turn-Off Delay Time :

65 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

2.4Ohm

Rds On Max :

2.7 Ω

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

PG-TO252-3

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Number of Pins :

3

Mounting Type :

Surface Mount

Power Dissipation :

42W

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Rise Time :

15ns

Voltage - Rated DC :

800V

Continuous Drain Current (ID) :

2A

Series :

CoolMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2005

Rds On (Max) @ Id, Vgs :

2.7Ohm @ 1.2A, 10V

Max Dual Supply Voltage :

800V

Turn On Delay Time :

25 ns

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

2A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free