SPD03N60C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Case Connection :

DRAIN

Pin Count :

3

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

38W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.9V @ 135µA

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

100 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Series :

CoolMOS™

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

9.6A

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

3.2A

Transistor Application :

SWITCHING

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V