SPD01N60C3BTMA1

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Mfr.Part #
SPD01N60C3BTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 800MA TO252-3
Stock
20,623
In Stock :
20,623

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Input Capacitance (Ciss) (Max) @ Vds :
100pF @ 25V
Halogen Free :
Not Halogen Free
Terminal Position :
Single
Vgs (Max) :
±20V
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
5nC @ 10V
Qualification Status :
Not Qualified
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
800mA
Rds On (Max) @ Id, Vgs :
6 Ω @ 500mA, 10V
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
Turn On Delay Time :
30 ns
Pin Count :
3
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Number of Elements :
1
JEDEC-95 Code :
TO-252AA
Drain-source On Resistance-Max :
6Ohm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id :
3.9V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
20 mJ
Power Dissipation-Max :
11W Tc
Power Dissipation :
11W
Lead Free :
Contains Lead
ECCN Code :
EAR99
Series :
CoolMOS™
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
Gull wing
Max Dual Supply Voltage :
600V
Drain to Source Voltage (Vdss) :
650V
Rise Time :
25ns
Drain Current-Max (Abs) (ID) :
0.8A
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Published :
2005
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Turn-Off Delay Time :
55 ns
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Case Connection :
DRAIN
Datasheets
SPD01N60C3BTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPD01N60C3BTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, SPD01N60C3BTMA1 pinout, SPD01N60C3BTMA1 datasheet PDF, SPD01N60C3BTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPD01N60C3BTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPD01N60C3BTMA1


N-Channel Tape & Reel (TR) 6 Ω @ 500mA, 10V ±20V 100pF @ 25V 5nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

SPD01N60C3BTMA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 800mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 600V, it supports the maximal dual supply voltage.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

SPD01N60C3BTMA1 Features


the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 800mA
the turn-off delay time is 55 ns
a 650V drain to source voltage (Vdss)


SPD01N60C3BTMA1 Applications


There are a lot of Infineon Technologies
SPD01N60C3BTMA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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