SPD06N80C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Power Dissipation :

83W

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Voltage - Rated DC :

800V

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Continuous Drain Current (ID) :

6A

Rds On Max :

900 mΩ

Fall Time (Typ) :

8 ns

Drain to Source Resistance :

780mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Supplier Device Package :

PG-TO252-3

FET Type :

N-Channel

Number of Elements :

1

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Power Dissipation-Max :

83W Tc

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

900mOhm @ 3.8A, 10V

Min Operating Temperature :

-55°C

Max Dual Supply Voltage :

800V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Input Capacitance :

785pF

Current Rating :

6A

Published :

2005

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

800V

Rise Time :

15ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

72 ns

Gate to Source Voltage (Vgs) :

20V