SPD04N80C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

1.3 Ω

Drain to Source Voltage (Vdss) :

800V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

Drain to Source Resistance :

1.1Ohm

Max Operating Temperature :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

800V

Current Rating :

4A

Vgs (Max) :

±20V

Rise Time :

15ns

Turn-Off Delay Time :

72 ns

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Fall Time (Typ) :

12 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.3Ohm @ 2.5A, 10V

Input Capacitance :

570pF

Max Dual Supply Voltage :

800V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Series :

CoolMOS™

Mount :

Surface Mount

Power Dissipation-Max :

63W Tc

Number of Pins :

3

Number of Elements :

1

Supplier Device Package :

PG-TO252-3

Power Dissipation :

63W

Published :

2005

Packaging :

Tape and Reel (TR)

Factory Lead Time :

18 Weeks

Turn On Delay Time :

25 ns

Continuous Drain Current (ID) :

4A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount