SPD04N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin

Avalanche Energy Rating (Eas) :

130 mJ

FET Type :

N-Channel

Power Dissipation-Max :

50W Tc

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Published :

2005

Number of Elements :

1

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

4.5A

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.95Ohm

Pbfree Code :

yes

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

950m Ω @ 2.8A, 10V

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

CoolMOS™

Pulsed Drain Current-Max (IDM) :

13.5A

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.9V @ 200µA

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 25V

Terminal Position :

Single

DS Breakdown Voltage-Min :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE