SP8K52FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

2W

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

12A

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.19Ohm

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

Operating Temperature :

150°C TJ

Packaging :

Cut Tape (CT)

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Published :

2016

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 5V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

3A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

170m Ω @ 3A, 10V

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)