SIZF906DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

16 mJ

Drain Current-Max (Abs) (ID) :

60A

FET Feature :

Standard

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

60A Tc

DS Breakdown Voltage-Min :

30V

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0038Ohm

Series :

TrenchFET® Gen IV

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 15A, 10V, 1.17m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

JESD-30 Code :

R-PDSO-N6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

2 N-Channel (Half Bridge)

Power - Max :

38W Tc 83W Tc

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 15V 8200pF @ 15V

Operating Temperature :

-55°C~150°C TA

Package / Case :

8-PowerWDFN

Number of Elements :

2

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V, 92nC @ 4.5V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

80A