SIZF918DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

1060pF 2650pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

23A Ta 40A Tc 35A Ta 60A Tc

Package / Case :

8-PowerWDFN

Power - Max :

3.4W Ta 26.6W Tc 3.7W Ta 50W Tc

Series :

TrenchFET® Gen IV

Gate Charge (Qg) (Max) @ Vgs :

22nC, 56nC @ 10V

FET Feature :

Standard

Supplier Device Package :

8-PowerPair® (6x5)

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual), Schottky

Vgs(th) (Max) @ Id :

2.4V @ 250μA, 2.3V @ 250μA

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)