SIZ730DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

27W 48W

Terminal Finish :

MATTE TIN

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Input Capacitance (Ciss) (Max) @ Vds :

830pF @ 15V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Number of Elements :

2

Length :

6mm

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

16A 35A

FET Feature :

Logic Level Gate

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Half Bridge)

Package / Case :

6-PowerPair™

DS Breakdown Voltage-Min :

30V

Factory Lead Time :

15 Weeks

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Rise Time :

15ns

Element Configuration :

Dual

Number of Terminations :

6

Drain-source On Resistance-Max :

0.0053Ohm

Number of Channels :

2

Max Power Dissipation :

48W

Time@Peak Reflow Temperature-Max (s) :

40

Height :

750μm

Pulsed Drain Current-Max (IDM) :

100A

Base Part Number :

SIZ730

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Pin Count :

6

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

45 mJ

ECCN Code :

EAR99

Threshold Voltage :

1V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Width :

3.73mm

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 15A, 10V

Continuous Drain Current (ID) :

35A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Case Connection :

DRAIN SOURCE