SIZ720DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Length :

6mm

Mount :

Surface Mount

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 16.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 10V

Width :

3.73mm

Factory Lead Time :

14 Weeks

Nominal Vgs :

2 V

Radiation Hardening :

No

Height :

750μm

Power Dissipation :

4.6W

Number of Channels :

2

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Max Power Dissipation :

48W

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

27W 48W

Terminal Finish :

MATTE TIN

FET Type :

2 N-Channel (Half Bridge)

Published :

2016

Package / Case :

6-PowerPair™

Continuous Drain Current (ID) :

16A