SIA537EDJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

4.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Turn On Delay Time :

15 ns

Threshold Voltage :

1V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

12V 20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

15ns

Fall Time (Typ) :

10 ns

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

Unknown

Turn-Off Delay Time :

30 ns

Number of Elements :

2

Number of Channels :

2

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Max Power Dissipation :

7.8W

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 8V

Rds On (Max) @ Id, Vgs :

28m Ω @ 5.2A, 4.5V

Published :

2007

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 6V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

-20V

Weight :

28.009329mg

Terminal Form :

C BEND

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

8V

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® SC-70-6 Dual

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

SIA537

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6