SIA513DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Resistance :

110mOhm

Current - Continuous Drain (Id) @ 25°C :

4.5A

Rds On Max :

60 mΩ

Power Dissipation :

1.9W

Number of Pins :

6

Length :

2.05mm

Turn-Off Delay Time :

15 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 10V

Width :

2.05mm

Fall Time (Typ) :

10 ns

Min Operating Temperature :

-55°C

Weight :

28.009329mg

Rise Time :

45ns

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

20V

Max Power Dissipation :

6.5W

Rds On (Max) @ Id, Vgs :

60mOhm @ 3.4A, 4.5V

Mount :

Surface Mount

Continuous Drain Current (ID) :

4.5A

Supplier Device Package :

PowerPAK® SC-70-6 Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

FET Type :

N and P-Channel

Series :

TrenchFET®

Power - Max :

6.5W

FET Feature :

Logic Level Gate

Package / Case :

PowerPAK® SC-70-6 Dual

RoHS Status :

ROHS3 Compliant

Height :

750μm

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Input Capacitance :

360pF

Number of Elements :

2

Turn On Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Base Part Number :

SIA513