SI4288DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Drain to Source Breakdown Voltage :

40V

Height :

1.75mm

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

1.2V

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

20m Ω @ 10A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

7 ns

Published :

2015

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

ECCN Code :

EAR99

Series :

TrenchFET®

REACH SVHC :

No SVHC

Weight :

506.605978mg

Continuous Drain Current (ID) :

7.4A

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Max Power Dissipation :

3.1W

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 20V

Fall Time (Typ) :

8 ns

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

9.2A

Factory Lead Time :

14 Weeks

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Element Configuration :

Dual